Band bending at the conducting polymer/indium tin oxide interfaces with and without ultraviolet treatmentLIN, Yow-Jon; CHIN, Yi-Min; LIN, Jung-Chung et al.Applied surface science. 2010, Vol 256, Num 21, pp 6259-6261, issn 0169-4332, 3 p.Article

Einfluss von Bandverbiegungen an der Oberfläche auf die Fotoleitung von a-Si : H-Schichten = Influence of surface-band bending on the photoconduction of a-Si:H filmsSTÖTZEL, H; DELTSCHEW, R; WASCHPANOW, Y. A et al.Wissenschaftliche Zeitschrift der Technischen Universität Dresden. 1991, Vol 40, Num 5-6, pp 121-125, issn 0043-6925Article

Photoemission study of ZnO nanocrystals: Thermal annealing in UHV and induced band bendingERICSSON, L. K. E; ZHANG, H. M; MAGNUSSON, K. O et al.Surface science. 2013, Vol 612, pp 10-15, issn 0039-6028, 6 p.Article

XPS and UPS study on band alignment at Pt-Zn-terminated ZnO(00 01 ) interfaceBLUMENTRIT, Petr; YOSHITAKE, Michiko; NEMSAK, Slavomir et al.Applied surface science. 2011, Vol 258, Num 2, pp 780-785, issn 0169-4332, 6 p.Article

Effect of substrate temperature on structural, optical and electrical properties of pulsed laser ablated nanostructured indium oxide filmsBEENA, D; LETHY, K. J; VINODKUMAR, R et al.Applied surface science. 2009, Vol 255, Num 20, pp 8334-8342, issn 0169-4332, 9 p.Article

Band bending and band alignment at HfO₂/HfSi_xO_y/Si interfacesWEIJIE SONG; YOSHITAKE, Michiko; RUIQIN TAN et al.Applied surface science. 2007, Vol 253, Num 7, pp 3508-3511, issn 0169-4332, 4 p.Article

XPS investigation of vacuum annealed vertically aligned ultralong ZnO nanowiresMAFFEIS, T. G. G; PENNY, M. W; CASTAING, A et al.Surface science. 2012, Vol 606, Num 1-2, pp 99-103, issn 0039-6028, 5 p.Article

Oxidation of clean silicon surfaces studied by four-point probe surface conductance measurementsPETERSEN, C. L; GREV, F; AONO, M et al.Surface science. 1997, Vol 377-79, pp 676-680, issn 0039-6028Conference Paper

Energy level alignment and band bending at TPD/metal interfaces studied by Kelvin probe methodHAYASHI, N; ITO, E; ISHII, H et al.Synthetic metals. 2001, Vol 121, Num 1-3, pp 1717-1718, issn 0379-6779Conference Paper

Level curvature and metal-insulator transition in 3d Anderson modelZYCZKOWSKI, K; MOLINARI, L; IZRAILEV, F. M et al.Journal de physique. I. 1994, Vol 4, Num 10, pp 1469-1477, issn 1155-4304Article

Quantitative assessment of the photosaturation techniqueAPHEK, O. B; KRONIK, L; LEIBOVITCH, M et al.Surface science. 1998, Vol 409, Num 3, pp 485-500, issn 0039-6028Article

Surface morphology and electronic structure of halogen etched InAs (111)EASSA, N; MURAPE, D. M; BETZ, R et al.Physica. B, Condensed matter. 2012, Vol 407, Num 10, pp 1591-1594, issn 0921-4526, 4 p.Conference Paper

Data retention characteristics of MANOS-type flash memory device with different metal gates at various levels of charge injectionMAN CHANG; KIM, Tae-Wook; LEE, Joonmyoung et al.Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1804-1806, issn 0167-9317, 3 p.Conference Paper

The effect of surface space-charge on the shape of the potential barrierFENG, P. X.Surface science. 1999, Vol 429, Num 1-3, pp L469-L474, issn 0039-6028Article

Investigation of band bending in silicon by slow positron lifetime measurementsDUFFY, J. A; BAUER-KUGELMANN, W; KÖGEL, G et al.Applied surface science. 1997, Vol 116, pp 241-246, issn 0169-4332Conference Paper

Energy gap revealed by low-temperature scanning―tunnelling spectroscopy of the Si(111)-7 x 7 surface in illuminated slightly doped crystalsODOBESCU, A. B; ZAITSEV-ZOTOV, S. V.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 39, issn 0953-8984, 395003.1-395003.5Article

Role of the surface in the electrical and optical properties of GaNFOUSSEKIS, M; FERGUSON, J. D; BASKI, A. A et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4892-4895, issn 0921-4526, 4 p.Conference Paper

Investigation of p-type macroporous silicon formationLEVY-CLEMENT, C; LUST, S; MAMOR, M et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 8, pp 1390-1395, issn 0031-8965, 6 p.Conference Paper

Physics of grain boundaries in the colossal magnetoresistance manganitesGROSS, R; ALFF, L; REUTLER, P et al.Journal of magnetism and magnetic materials. 2000, Vol 211, Num 1-3, pp 150-159, issn 0304-8853Conference Paper

Hall effect measurement and band bending calculation of hydrogenated diamond film grown by chemical vapor depositionSHIRAKAWA, Y; ANDA, Y; MAKI, T et al.Japanese journal of applied physics. 1997, Vol 36, Num 6A, pp 3414-3417, issn 0021-4922, 1Article

Scanning tunneling microscopy investigation of the surface structures of natural MoS₂JEONG SOOK HA; HEE-SOOK ROH; SEONG-JU PARK et al.Surface science. 1994, Vol 315, Num 1-2, pp 62-68, issn 0039-6028Article

The profile of electrically active phosphorus in silicon after thermal oxidationNICOLLIAN, E. H; AJAY CHATTERJEE.Journal of the Electrochemical Society. 1994, Vol 141, Num 12, pp 3580-3584, issn 0013-4651Article

Two-band calculations on the upper critical field of superconductor NbSe₂LEI CHEN; JING ZUO; YANYAN LU et al.Physica. C. Superconductivity. 2011, Vol 471, Num 23-24, pp 1591-1594, issn 0921-4534, 4 p.Article

Electron emission by current injection from n-type diamond film surface with negative electron affinityTAKEUCHI, D; MAKINO, T; KATO, H et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 9, pp 2093-2098, issn 1862-6300, 6 p.Conference Paper

Hydrogen desorption kinetics and band bending for 6H-SiC(0001) surfacesKING, S. W; DAVIS, R. F; NEMANICH, R. J et al.Surface science. 2009, Vol 603, Num 20, pp 3104-3118, issn 0039-6028, 15 p.Article